Appeal No. 95-0537
Application No. 08/077,709
preferential direction on a substrate. For the reasons set
forth above, Eom and Beasley fail to suggest the invention of
claims 1-9.
Gallagher discloses superconductive films which can be
epitaxially deposited on gallate substrates (col. 3, lines 54-
61). However, Gallagher adds nothing to the deficiencies of
Eom or Beasley. In contrast to appellants' invention,
Gallagher discloses a c-axis film. See col. 9, lines 50-52
("to grow epitaxial films with desirable superconducting
properties the c-axis is preferably normal to the substrate
interface"); col. 10, lines 6-11 (YBa Cu O films were
2 3x
epitaxially deposited on chemically polished LaGaO crystal
3
wafers; these films are epitaxial with their c-axis normal to
the growth interface). Therefore, the rejections of claims 1-
9 under 35 U.S.C. § 103 as being unpatentable over (1) the
combination of Eom and Gallagher and (2) the combination of
Beasley and Gallagher are reversed.
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