Appeal No. 1995-3416
Application No. 08/127,707
application, have been allowed by the examiner. Claim 26 is
illustrative:
26. A method of forming a semiconductor device
comprising the steps of:
(a) providing a silicon substrate of a first conductivity
type;
(b) forming an electrically insulating layer on said
substrate having a bird's beak region at an edge portion
thereof;
(c) implanting ions of said first conductivity type into
said substrate and beneath said electrically insulating layer,
the concentration of said ions of said first conductivity type
being greater beneath said bird's beak region than beneath the
remainder of the portion of said substrate beneath said
electrically insulating layer; and
(d) completing fabrication of said semiconductor device
in the region of said substrate immediately adjacent said
bird's beak region.
In the rejection of the appealed claims, the examiner
relies upon the following reference:
Kurakami et al. (Kurakami) 4,357,747 Nov. 9, 1982
Appellant's claimed invention is directed to a process of
forming a semiconductor device having a bird's beak region at
an edge portion of an insulating layer, and increasing the
impurity, dopant concentration in the substrate under the
bird's beak region in order to increase the threshold voltage
of this area and improve the radiation tolerance of the device
-2-
Page: Previous 1 2 3 4 5 6 7 8 Next
Last modified: November 3, 2007