Ex parte BEINGLASS et al. - Page 9




          Appeal No. 95-3438                                                          
          Application No. 08/033,656                                                  


          out the process for depositing a silicon nitride film.                      
          Indeed, according to appellants, these examples simply                      
          demonstrate the expected normal variation in deposition rates               
          between runs using their method.  Appellants contend that                   
          slight differences in gas flow rates, the pressure of the                   
          reactor, temperature of the wafer as well as other parameters               
          between successive runs adequately explain why the deposition               
          rates were not identical.  Keeping in mind that the deposition              
          rate is reported in terms of angstroms                                      





















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