Appeal No. 95-3438 Application No. 08/033,656 out the process for depositing a silicon nitride film. Indeed, according to appellants, these examples simply demonstrate the expected normal variation in deposition rates between runs using their method. Appellants contend that slight differences in gas flow rates, the pressure of the reactor, temperature of the wafer as well as other parameters between successive runs adequately explain why the deposition rates were not identical. Keeping in mind that the deposition rate is reported in terms of angstroms 9Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 NextLast modified: November 3, 2007