Appeal No. 95-3455
Application 07/945,902
gas.
Hillman is directed to the manufacture of semiconductor
devices using chemical vapor deposition (CVD) of tungsten
silicide by the reduction of tungsten hexafluoride by silane
gases (column 1, lines 5 through 9). At column 1, lines 14
through 16, tungsten silicide is described as particularly
useful in the manufacture of gate metallizations wherein a low
resistivity tungsten silicide layer is formed on a polysilicon
layer. In the ensuing discussion at column 1, lines 21
through 50, Hillman discloses, inter alia, that using
dichlorosilane leads to cleaner deposition chambers and cites
voluminous prior
art said to describe "[t]he use of dichlorosilane instead of
silane".
Price'343 discloses that when using plasma reactors for
depositing silicon, silane is known to deposit silicon
everywhere once a minimum temperature is achieved while
silicon tetrachloride will not deposit silicon when used
alone. Dichlorosilane is described as having properties
intermediate silane and silicon tetrachloride. See column 1,
16
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