Appeal No. 95-3455
Application 07/945,902
their earlier filed Japanese application and we have treated
the article as prior art under 35 U.S.C. § 102(a).
THE REJECTION
As we have stated above, the claimed method differs from
the admitted prior art by using dichlorosilane in place of
silane. However, each of Hillman, Price'373, Price'474 and
Koyama et al. teaches that dichlorosilane has been used in the
manufacture of semiconductor devices for reducing tungsten
hexafluoride to form tungsten silicide. The art recognizes
certain process advantages in using dichlorosilane rather than
silane. For example, Hillman discloses that using
dichlorosilane results in cleaner deposition chambers.
Price'343 discloses the use of dichlorosilane to reduce
tungsten hexafluoride to deposit tungsten silicide yields an
efficient, rapid lay down of tungsten silicide. Price'474
discloses that by using dichlorosilane to lay down both
polycrystalline silicon and tungsten silicide greater bonding
strength is obtained between the polycrystalline silicon and
the tungsten silicide. Additionally, the layers so-produced
have a low resistivity after sintering. Koyama et al. teach
the resistance of silicide layers is reduced by using
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