Appeal No. 95-3557
Application No. 07/833,417
(4) etching away boron doped silicon material with a potassium hydroxide
etchant leaving said boss section having a thickness x and said flexure section having a
thickness y.
11. A flexure section provided in a silicon material joined with a boss section,
said boss section thicker than said flexure section, said flexure section machined from a
substrate of p-type doped silicon material by the process of:
diffusing n-type dopant material into said substrate so as to provide an n-type
material at a depth (x-y) from a surface of the p-type material, said diffusing being
provided only in the regions of the boss section, where x is the boss section thickness
and y is the flexure section thickness:
epitaxially growing a layer of n-type doped silicon on said substrate to a desired
flexure section thickness y over the surface of the p-type doped silicon and the areas of
diffusion of n-type silicon; and
etching away p-type doped silicon material with a p-type doped silicon etchant
leaving said boss section having a thickness x and said flexure section having a
thickness y.
12. A flexure section in accordance with claim 11, wherein said diffusing step
comprises the steps of:
implantation of n-type dopant ions in said substrate; and
annealing said substrate so as to eliminate crystal lattice defects and to at least
partially diffuse said dopant ions.
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Last modified: November 3, 2007