Appeal No. 95-4761 Application No. 08/012,781 Examiner. A further amendment after final rejection filed July 31, 1995 along with a Reply Brief was denied entry by the Examiner. The disclosed invention relates to the growth of semiconductor materials on heteroepitaxial substrates. More particularly, Appellants disclose at page 4 of the specification that a dislocation absorbing grid is provided at the heterointerface. Representative claim 14 is reproduced as follows: 14. An integrated circuit, comprising: (a) a first layer over a grid having a diameter on the order of 10 µm on a layer of a second material; and (b) devices formed in said first layer and interconnected. The Examiner's Answer relies on the following references : 2 Luryi 4,806,996 Feb. 21, 1989 Soga et al. (Soga), "Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers," Japanese Journal of Applied Physics, Vol. 26, No. 2, pages 252-255 (February 1987). 2In the final rejection, the Examiner additionally relied on Yokogawa (JP 63-126288); however, Yokogawa has not been relied on the Examiner's Answer. 3Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 NextLast modified: November 3, 2007