Ex parte SHICHIJO et al. - Page 3




                 Appeal No. 95-4761                                                                                                                     
                 Application No. 08/012,781                                                                                                             


                 Examiner.  A further amendment after final rejection filed                                                                             
                 July 31, 1995 along with a Reply Brief was denied entry by the                                                                         
                 Examiner.                                                                                                                              
                          The disclosed invention relates to the growth of                                                                              
                 semiconductor materials on heteroepitaxial substrates.  More                                                                           
                 particularly, Appellants disclose at page 4 of the                                                                                     
                 specification that a dislocation absorbing grid is provided at                                                                         
                 the heterointerface.                                                                                                                   
                          Representative claim 14 is reproduced as follows:                                                                             
                          14.  An integrated circuit, comprising:                                                                                       
                          (a) a first layer over a grid having a diameter on the                                                                        
                 order of 10 µm on a layer of a second material; and                                                                                    
                          (b) devices formed in said first layer and                                                                                    
                 interconnected.                                                                                                                        
                          The Examiner's Answer relies on the following references :                                          2                         
                 Luryi                                                 4,806,996                                    Feb. 21,                            
                 1989                                                                                                                                   
                 Soga et al. (Soga), "Selective MOCVD Growth of GaAs on Si                                                                              
                 Substrate with Superlattice Intermediate Layers," Japanese                                                                             
                 Journal of Applied Physics, Vol. 26, No. 2, pages 252-255                                                                              
                 (February 1987).                                                                                                                       


                          2In the final rejection, the Examiner additionally relied                                                                     
                 on Yokogawa (JP 63-126288); however, Yokogawa has not been                                                                             
                 relied on the Examiner's Answer.                                                                                                       
                                                                           3                                                                            





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