Appeal No. 95-4761
Application No. 08/012,781
Examiner. A further amendment after final rejection filed
July 31, 1995 along with a Reply Brief was denied entry by the
Examiner.
The disclosed invention relates to the growth of
semiconductor materials on heteroepitaxial substrates. More
particularly, Appellants disclose at page 4 of the
specification that a dislocation absorbing grid is provided at
the heterointerface.
Representative claim 14 is reproduced as follows:
14. An integrated circuit, comprising:
(a) a first layer over a grid having a diameter on the
order of 10 µm on a layer of a second material; and
(b) devices formed in said first layer and
interconnected.
The Examiner's Answer relies on the following references : 2
Luryi 4,806,996 Feb. 21,
1989
Soga et al. (Soga), "Selective MOCVD Growth of GaAs on Si
Substrate with Superlattice Intermediate Layers," Japanese
Journal of Applied Physics, Vol. 26, No. 2, pages 252-255
(February 1987).
2In the final rejection, the Examiner additionally relied
on Yokogawa (JP 63-126288); however, Yokogawa has not been
relied on the Examiner's Answer.
3
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