Appeal No. 96-0384 Page 2
Application No. 08/106,252
claims (final rejection, page 4). Claims 9-14 and 22, which
are the only other claims remaining in the application, have
been withdrawn from consideration by the examiner as being
directed toward a non-elected invention.
BACKGROUND
The appellants' invention relates to a method for
formation of a semiconductor material comprising capping a
mercury cadmium tellurium substrate with a tellurium rich
cadmium telluride layer and annealing the capped substrate.
An understanding of the invention can be derived from a
reading of exemplary claim 1, which is reproduced below.
1. A method for establishing a metal vacancy
concentration in a substrate of mercury cadmium telluride
comprising the steps:
capping the substrate with a layer of tellurium rich
cadmium telluride; and,
annealing the capped substrate at a temperature
sufficient to support interdiffusion between the telluride
rich cadmium telluride layer and the mercury cadmium telluride
substrate.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Jack et al. (Jack) 4,927,773 May 22,
1990
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