Appeal No. 96-0386
Application No. 08/270,082
The claimed invention relates to a method of forming an
ohmic contact to a III-V semiconductor material. More
particularly, Appellants disclose at pages 2 and 3 of the
specification that after layers of silicon nitride, a
dielectric, and a mask are formed on the semiconductor
material, a portion of the dielectric layer is wet etched. As
further disclosed at pages 4 and 5 of the specification, a dry
etch is then performed on the silicon nitride layer using a
chemical comprising a Group VI element. Finally, an ohmic
metal layer contact is formed on the III-V semiconductor
material as illustrated in Figures 2 and 3 of the drawings.
Claim 1 is illustrative of the invention and reads as
follows:
1. A method of forming an ohmic contact, comprising the
steps of:
providing a III-V semiconductor material;
forming a silicon nitride layer on the III-V
semiconductor material;
forming a dielectric layer over the silicon nitride
layer;
forming a masking layer over the dielectric layer;
removing a portion of the masking layer;
2
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