Appeal No. 96-0386
Application No. 08/270,082
wet etching a portion of the dielectric layer such that
the silicon nitride layer is not substantially etched;
dry etching a portion of the silicon nitride layer using
a chemical comprised of a group VI element; and
forming an ohmic metal layer on the III-V semiconductor
material.
The Examiner relies on the following references:
Johnson 5,144,410 Sep. 01,
1992
Suehiro (Japanese Kokai) 2 3-11628 Jan. 18,
1991
Pinto et al. (Pinto), "Reactive Ion Etching in SF Gas
6
Mixtures," J. Electrochem. Soc.:SOLID STATE SCIENCE AND
TECHNOLOGY, Vol. 134, No. 1, January 1987, pp. 165-175.
Claims 1-5 and 7-15 stand rejected under 35 U.S.C. § 103
as being unpatentable over Suehiro in view of Pinto. Claim 6
stands rejected under 35 U.S.C. § 103 as being unpatentable
over Suehiro in view of Pinto and Johnson.
Rather than reiterate the arguments of Appellants and the
Examiner, reference is made to the Brief and Answer for the
respective details.
OPINION
2A copy of the translation provided by the U.S. Patent
and Trademark Office, February 1999, is included and relied
upon for this decision.
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