Appeal No. 96-2722
Application 08/281,168
at least one first insulated gate transistor, including at least one MOS transistor, having a gate
connected to said first power-supply potential, and a source connected to said second power-supply
potential, said first insulated gate transistor being producible by the process step of fabricating said
insulated gate transistor of the first conductivity type and said insulated gate transistor of the second
conductivity type;
diode means including a second insulated gate transistor connected in series with said first
insulated gate transistor in the forward direction between said first power-supply potential and said first
insulated gate transistor and having an anode and a cathode for generating a predetermined voltage
drop between said anode and said cathode when it is on, a drain of the at least one first insulated gate
transistor being connected to a drain of the second insulated gate transistor, said diode means being
producible by the process step of fabricating said insulated gate transistor of the first conductivity type
and said insulated gate transistor of the second conductivity type;
voltage drop means having a first end connected to said first or second power-supply potential
and a second end connected to said circuit-to-be started and having a predetermined resistance
between said first end and said second end for causing the current between said first and second
power-supply potentials to flow in said circuit-to-be started when started, said voltage drop means
being producible by the process step of fabricating said insulated gate transistor of the first conductivity
type and said insulated gate transistor of the second conductivity type; and
switching means having an input terminal connected to said second end of said voltage drop
means, an output terminal connected to said circuit-to-be started, and a control terminal connected to
said cathode of said diode means for accomplishing connection/disconnection between said input
terminal and said output terminal in accordance with a potential difference between said control terminal
and said input terminal, said switching means being producible by the process step of fabricating said
insulated gate transistor of the first conductivity type and said insulated gate transistor of the second
conductivity type.
The following references, in addition to applicants' admitted prior art, are relied on by the
examiner:2
2 We note that while the Answer lists Aoyama et al. (U.S. Patent No. 4,504,743) and Sedra & Smith as
examples to support the arguments (Answer, page 3, section 8), we note that neither the statement of the rejection in
the Answer (Answer, pages 3 to 4, section 9), the statement in the Final Rejection (Final Rejection, pages 2 to 3,
paragraphs 2 to 4), nor the response to arguments in the Final Rejection (Final Rejection, pages 3 to 4) expressly rely
3
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