Appeal No. 96-3889
Application 08/336,956
FLEMING, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal from the final rejec-
tion of claims 11 through 14. In a telephone interview on
August 11, 1997, claims 12 through 14 were canceled by Appel-
lants. Therefore, only claim 11 is before us for our consid-
eration.
The invention relates to thin SOI integrated cir-
cuits.
Independent claim 11 is reproduced as follows:
11. An SOI field effect transistor having a self-
aligned body contact and comprising a source and drain doped
with a first polarity and formed in a silicon layer doped with
a second polarity and disposed above an insulating substrate,
and a gate insulator and gate, having a gate top surface,
disposed above a body portion of said silicon layer between
said source and drain and extending a gate length along a
first axis passing between said source and drain, further
comprising:
a gate extension connected to said gate and also
disposed above said gate insulator and above a collection
portion of said silicon layer, said body portion and said
collection portion being in proximity, whereby minority carri-
2
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