Appeal No. 96-3889
Application 08/336,956
ers may flow from said body portion to said collection por-
tion;
raised source and drain contact members capped with
a cap dielectric having a cap top surface above said gate top
surface;
a collection electrode doped with said second polar-
ity and disposed in contact with said silicon layer on a
collection side of said gate extension opposite said gate,
whereby minority carriers may flow from said body through said
collection portion of said silicon layer to said collection
electrode, said gate extension having gate sidewall support
members connected to said gate and disposed between said
collection electrode and said source and drain, said collec-
tion electrode being isolated from said gate and from said
raised source and drain contact members by at least one insu-
lating sidewall.
The reference relied on by the Examiner is as fol-
lows:
Yamaguchi et al. (Yamaguchi) 5,355,012 Oct. 11, 1994
(filed Apr. 28,
1993)
Claim 11 stands rejected under 35 U.S.C. § 102 as
being anticipated by Yamaguchi.
Rather than repeat the arguments of Appellants or
the
Examiner, we make reference to the brief and the answer for
the details thereof.
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