Ex parte GEMPE et al. - Page 3




          Appeal No. 1996-4073                                                        
          Application No. 08/345,917                                                  
          is formed on semiconductor substrate 40.  Epitaxial layer 44                
          forms an anode of detector diode 42.  Semiconductor substrate               
          40 also forms a cathode of detector diode 42.  Looking at                   
          Figure 8, an integrated light emitting diode 62/detector diode              
          63 is mounted on a lead frame                                               
          51 at mounting area 59, and photo detector diode 61 is at                   
          mounting area 58.  Mounting areas 58 and 59 are coplanar.                   
                   Independent claim 31 is reproduced as follows:                    
                    31. A linear integrated optocoupler comprising:                   
                    an integrated light emitting diode and detector                   
          diode wherein said detector diode detects light emitted by                  
          said light emitting diode and provides a signal for                         
          linearizing a response of said light emitting diode, said                   
          integrated light emitting diode and detector diode comprising:              
                    a semiconductor substrate;                                        
                    a first epitaxial layer formed on a first side of                 
          said semiconductor substrate;                                               
                    a second epitaxial layer formed on a second side of               
          said semiconductor substrate, said first and second sides of                
          said                                                                        
          semiconductor substrate oppose one another, said first                      
          epitaxial layer is an anode of said light emitting diode, said              
          second epitaxial layer is an anode of said detector diode, and              
          said semiconductor substrate is a common cathode of said                    
          integrated light emitting diode and detector diode;                         
                    a photodetector diode for receiving light emitted by              
          said light emitting diode;                                                  
                    a lead frame including a first area and a second                  

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