Appeal No. 96-4081
Application 08/417,333
This is a decision on appeal from the final rejec-
tion of claims 1 through 11. Claims 12 through 18 have been
withdrawn from consideration.
The invention is directed to a semiconductor memory
device and a manufacturing method thereof. In particular,
Appellants disclose on page 1 of the specification that the
invention is directed to a semiconductor memory device and
manufacturing method thereof in which a single memory cell
consists of a single field effect transistor.
Independent claim 1 is reproduced as follows:
1. A semiconductor memory device in which a single
memory cell consists of a single field effect transistor,
wherein
said field effect transistor has its source terminal
connected to a source wiring having at a portion thereof a
resistor with a high resistance.
The Examiner does not rely on any references for the
rejection.
The specification is objected to under 35 U.S.C.
§ 112, first paragraph, as failing to provide an adequate
written description of the invention. Claims 1 through 11
2
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