Appeal No. 96-4081
Application 08/417,333
nowhere is it taught that the cells have only a single
transistor.
Turning to Appellant's specification, we find on
page 1 that Appellant discloses that the present invention
relates to a semiconductor memory device in which a single
memory cell
consists of a single field effect transistor. Furthermore,
Appellant discloses on the same page that Figure 24 is a
circuit diagram of a conventional semiconductor device having
a single memory cell provided by a single enhanced type Metal
Oxide Semiconductor (MOS) transistor. Furthermore, on page 2
of the specification, Appellant discloses the operation of the
semi- conductor device shown in Figure 24 in which it clearly
shows that each transistor operates as a single cell to record
a single bit of data. On page 16 of the specification,
Appellant discloses that Figure 1 is a circuit diagram of
the present invention in which the eight transistors 51-58 are
enhanced type MOS transistors which each operate as a single
cell of the memory.
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