Appeal No. 1996-4082
Application 08/179,238
collector region of a heterojunction bipolar transistor being under an etch stop layer as defined in each
of independent claims 1, 7, 19, 21, 23, and 28 on appeal.
Representative independent claim 7 is reproduced below:
7. A heterojunction bipolar transistor, comprising:
(a) an emitter region;
(b) a base region;
(c) an etch stop layer adjacent both said emitter region and said base region; and
(d) a collector region under said etch stop layer.
The following references are relied on by the examiner:
Adlerstein 4,939,562 July 3, 1990
Lunardi et al. (Lunardi) 5,001,534 Mar. 19, 1991
(filed July 11, 1989)
The 35 U.S.C. § 112, second paragraph, rejection of claims 7 to 12, 18, 24, 29, and 30 which
was newly made by the examiner in the Answer (see Answer, pages 5 to 6), has been withdrawn.4
4The Supplemental Answer, at page 1 therein, indicates that the amendment submitted by appellant April 8,
1996, has been entered and overcomes the § 112, second paragraph, rejection which was made for the first time in the
Answer.
3
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