Appeal No. 1997-0515
Application 08/350,504
This is a decision on appeal from the final rejec-
tion of claims 10 and 14 through 16, all the claims pending in
the present application. Claims 1 through 9 were withdrawn as
directed to a non-elected invention. Claims 11 through 13
have been cancelled.
The invention relates to a transistor suitable for
use in integrated circuits having small feature sizes. In
particular, Appellant discloses on page 8 of the specification
that figure 4 shows the invention. Figure 4 shows a structure
having a moderately doped region 14 and an epitaxial layer 16
used to form a self-aligned, lightly doped drain (LDD) struc-
ture. Sidewall oxide regions 26 are then formed alongside the
gate electrode 20 followed by implant of the heavily doped
source/drain regions 28.
Independent claim 10 is reproduced as follows:
10. An integrated circuit device, comprising:
a substrate having a doped region therein, said
doped region having a first doping level;
an epitaxial silicon region overlying the doped
substrate region, said epitaxial silicon region having a
second doping level that is less than said first doping level;
2
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