Appeal No. 1996-1431
Application 08/087,140
c) a floating gate memory device comprising:
a third set of first and second spaced apart regions
formed in said silicon substrate, said third set of
first and second spaced-apart regions substantially forming
a third channel therebetween;
a third gate insulator disposed on said third channel;
a floating gate;
an intergate insulator disposed on said floating gate;
and,
a memory device control gate disposed on said intergate
insulator.
The examiner relies on the following references:
Oshima 5,034,798 July 23, 1991
Arakawa 5,291,043 Mar. 01, 1994
(filed Nov. 14, 1990)
Claims 76-94 stand rejected under 35 U.S.C. § 103. As
evidence of obviousness the examiner offers Oshima in view of
Arakawa.
Rather than repeat the arguments of appellants or the
examiner, we make reference to the brief and the answer for the
respective details thereof.
OPINION
We have carefully considered the subject matter on
appeal, the rejection advanced by the examiner and the evidence
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