Appeal No. 1997-1249
Application 08/179,601
28. A radiation detector comprising:
a plurality of planar absorption members arranged in a
stack having a surface made up of the edges of said absorption
members,
each said absorption member having at least one
terminating edge exposed in a surface of said stack,
each said absorption member further having a center layer
of high density, high band gap, semiconductor material that is
intrinsic, and has a selected thickness dimension,
a first highly conductive contacting layer of only one of
a high extrinsic conductivity semiconductor material and a
metal,
said first contacting layer being contiguous with a first
surface of said intrinsic layer, coextensive with said
intrinsic layer, and having a thickness that is small relative
to said selected thickness of said intrinsic layer, and,
a second highly conductive contacting layer of only one
of a high extrinsic conductivity semiconductor material and a
metal,
said second contacting layer being contiguous with a
second and opposite surface of said intrinsic layer,
coextensive with said intrinsic layer, and has a thickness
that is small relative to said selected thickness of said
intrinsic layer, and,
an electrical bias applied between said first and said
second contacting layers, in a magnitude related to said
bandgap, the carrier density and said thickness dimension of
said intrinsic layer, of a magnitude sufficient for
essentially full charge extraction.
The Examiner relies on the following references:
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