Appeal No. 1997-1808 Page 2
Application No. 08/172,101
rejections of claims 27-29, 33, 34, 36-39, 44, 46, 47, 52, 57-60, 62, 63, 68-73, and 75-77 (Answer,
page 2). Therefore, this appeal is limited to claims 30-32, 35, 41-43, 66, 67, and 74, the only claims
currently rejected.
BACKGROUND
The invention relates to a method for fabricating a semiconductor memory containing a storage
capacitor on a semiconductor substrate. The storage capacitor is formed by filling a groove formed in
the semiconductor substrate with layers of various materials. Formation in a groove rather than on a
planar surface of the substrate allows memory capacity to be increased without increasing the plan area
of the device.
Claims 30-32, 35, 41-43, 66, 67, and 74 stand rejected under 35 U.S.C. § 112, first
paragraph, as lacking an adequate written description of the invention as the subject matter of the
rejected claims is not supported by the disclosure as originally filed. We affirm for the following
reasons.
OPINION
There are two independent claims on appeal. Claim 74 recites the following:
74. A method of filling a groove in a semiconductor substrate to be used for fabricating a
semiconductor device, comprising the steps of:
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