Appeal No. 1997-3484
Application 08/089,359
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from
the final rejection of claims 1-5. Claims 6-10 are
indicated to be allowable. Claims 20-28 stand withdrawn
pursuant to a restriction requirement.
We reverse.
BACKGROUND
The disclosed invention is directed to an integrated
circuit with two different types of field effect transistors
which eliminates the need for epitaxial regrowth.
Claim 1 is reproduced below.
1. An integrated circuit for providing low-noise and
high-power microwave operation comprising:
a material structure comprising:
a substrate;
a low-noise channel layer;
a low-noise buffer layer;
a power channel layer; and
a wide bandgap layer;
a first active region comprising:
a first source contact above said wide bandgap
layer;
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