Appeal No. 1997-3484 Application 08/089,359 order to meet the limitations of "a first source contact above said wide bandgap layer," "a first drain contact above said wide bandgap layer," "a second source contact above said wide bandgap layer," "a second drain contact above said wide bandgap layer," and "a second gate contact to said wide band-gap [sic] layer." The Examiner finds the region above the p-channel region 3H to be the low-noise buffer layer (EA2) and considers the region with the plus signs in circles underlying the gate 12 as part of the gate contact with electrode 12 (EA5). However, this is an unreasonable distortion of Takikawa since gate electrode 12 is separated from the layer 4 above region 3H by layer 5 and, thus, there is no contact "to" this layer 4. above region 3H. The layer 5 is a potential barrier which is doped with impurities to retain ionized charges (indicated by the plus signs in circles) which shift the threshold voltage of the HEMT toward negative (col. 5, line 62 to col. 6, line 2) and is not part of the gate contact. Takikawa does not disclose "a first gate contact to said low-noise buffer layer." Third, claim 1 does not teach alloyed source and drain contacts because, as noted by Appellants (Br4), Takikawa - 6 -Page: Previous 1 2 3 4 5 6 7 8 9 NextLast modified: November 3, 2007