Appeal No. 1997-4033
Application No. 08/589,584
a third cladding layer covering a top surface of said
second cladding layer and sloped side walls of laminations of
said buffer layer, multiple quantum well optical wave-guide
layer, and second cladding layer; and
a cap layer formed on a top surface of said third
cladding layer;
a dielectric film covering at least an entire surface of
said ridge-shaped optical wave-guide; and
two top electrodes extending over an entire part of said
two parallel straight phase modulator sections.
The references and rejection
The examiner relies on the following references:
Sasaki et al. (Sasaki), Novel Structure Photonic Devices
Using Selective MOVPE Growth, 33 NEC Research & Development
372-82 (1992).
Rolland et al. (Rolland), 10 Gbits/s, 1.56um MULTIQUANTUM
WELL InP/InGaAsP MACH-ZEHNDER OPTICAL MODULATOR, 29
Electronics Letters 471-72 (1993).
Claims 22-26 stand rejected under 35 U.S.C. § 103 as
unpatentable for obviousness over Rolland and Sasaki.
The merits of the examiner's 35 U.S.C. § 103 rejection
The 35 U.S.C. § 103 rejection is unsustainable even
assuming the claims are accurate to call for the MQW structure
8
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