Appeal No. 1998-0694
Application No. 08/637,009
withdrawn from consideration as being directed to a nonelected
invention.
The invention pertains to a semiconductor device
having a titanium silicide film formed on a silicon crystal
surface.
The titanium silicide film is made thermally stable by
forming a thermal oxide film on its surface, wherein the
thermal oxide film comprises titanium oxide and silicon
dioxide. The thermal oxide film prevents agglomeration of the
titanium silicide at temperatures in which agglomeration would
occur in the absence of the thermal oxide. A method for
making such a semiconductor device is also disclosed and
claimed.
Representative claim 22 is reproduced as follows:
22. A semiconductor device including a thermally
stable titanium silicide structure comprising a titanium
silicide film formed on a silicon crystal surface, and a
thermal oxide, comprising titanium oxide and silicon dioxide,
formed on a surface of said titanium silicide, wherein said
thermal oxide film prevents agglomeration of said titanium
silicide film at temperatures between 800EC and 1,000EC which
agglomeration would occur in the absence of said thermal
oxide.
The examiner relies on the following references:
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