Appeal No. 1998-1577
Application No. 08/593,766
doped regions in the silicon member, and thereafter a number
of laser pulses having an energy level lower than the single
pulse is directed onto selected regions of the silicon member
to produce heavily doped regions in the silicon member.
Claim 1 is illustrative of the claimed invention, and it
reads as follows:
1. A process for fabricating a LDD source drain,
particularly adapted for MOS transistors, including:
providing a dopant atmosphere about a silicon member;
directing a single pulse of laser energy onto
selected regions of the silicon member to produce lightly
doped regions in the silicon member; and
directing a number of laser pulses having energy
lower than the single pulse onto selected regions of the
silicon member to produce heavily doped regions in the
silicon member.
The reference relied on by the examiner is:
Ishida et al. (Ishida) 5,316,969 May 31,
1994
Claims 1 through 18 stand rejected under 35 U.S.C. §
103(a) as being unpatentable over Ishida.
Reference is made to the brief and the answer for the
respective positions of the appellants and the examiner.
OPINION
2
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