Appeal No. 1998-1577
Application No. 08/593,766
The examiner is of the opinion (Answer, pages 3 and 4)
that Ishida discloses substantially all of the method steps
including “directing a single pulse of high laser energy onto
selected regions of a silicon member to produce lightly doped
regions in the silicon,” and controlling dosage by “varying
either the laser energy or by varying the number of pulses.”
The examiner concludes (Answer, page 4) that “[i]t would have
been obvious to one of ordinary skill in the art to have used
the method of Ishida to make an LDD device and to have varied
the number of pulses, the laser energy, the duration of the
pulse(s) and the wavelength of the pulse(s) for the reasons
given in Ishida (column 3, lines 35-45; column 4, lines 22-
28).”
Appellants argue (Brief, pages 7 and 8) that:
A detailed review of Ishida et al clearly refutes
the Examiner’s statement, since nowhere in Ishida et
al is there a teaching of using a single pulse of
high laser energy. For instance, in “Example 1” of
Ishida et al (Col. 3, lines 23-45) it states that
Figure 3 of Ishida et al presents results for “a
sample which received 20 non-melt pre-dep pulses and
15 drive-in pulses at 175 ns melt duration”; and
“The non-melt dose as a function of laser energy and
as a function of number of pulses is shown in
Figures 4 and 5" of Ishida et al. Lines 35-37 of
Col. 3 of Ishida et al discuss “varying the number
of pulses”. Where in “Example 1” is there a
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