Ex parte FUJISAKI et al. - Page 10




          Appeal No. 1998-1660                                                        
          Application No. 08/108,499                                                  


          fundamentally different, the Examiner’s conclusion that                     
          Ghandhi’s process will produce a crystal which satisfies the                
          claimed relationships can only be based on unfounded                        
          speculation.  Accordingly, since all of the claimed                         
          limitations are not disclosed by Ghandhi, or inherent therein,              
          the Examiner’s rejection under 35 U.S.C. § 102(b) of                        
          independent claims 11 and 12, as well as claims 13 and 14                   
          dependent thereon, is not sustained.                                        
              Turning to the Examiner’s separate rejection of claims                 
          11-14 as being unpatentable under 35 U.S.C. § 103 over the                  
          combination of Ghandhi and Sze, we do not sustain this                      
          rejection as well.  As the basis for this rejection, the                    
          teachings of Sze, which provide a chart linking resistivity to              
          impurity concentration, have been added to Ghandhi to buttress              
          the Examiner’s assertion of the inherency of Ghandhi’s                      
          disclosed crystal growing process in producing a GaAs crystal               
          as claimed.                                                                 
               We agree with Appellants, however, that the teachings of               
          Sze do not cure the deficiencies of Ghandhi for all of the                  
          reasons discussed supra.  In our view, the limited showing of               
          a resistivity-impurity concentration link provided by Sze,                  
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