Ex parte FUJISAKI et al. - Page 11




          Appeal No. 1998-1660                                                        
          Application No. 08/108,499                                                  


          does not add any support for the Examiner’s unfounded                       
          conclusion that Ghandhi’s crystal growing process will                      
          inherently produce a GaAs crystal with a particular lattice                 
          constant distribution which would satisfy the inequality                    
          relationship as recited in the claims on appeal.  Therefore,                
          since all of the limitations of the appealed claims are not                 
          taught or suggested by the prior art, the Examiner has not                  
          established a prima facie case of obviousness.  Accordingly,                
          the Examiner’s 35 U.S.C. § 103 rejection of claims 11-14 is                 
          not sustained.                                                              
               With respect to dependent claim 15 which is limited to a               
          particular wafer diameter dimension of “at least 5 cm”, the                 
          Examiner has added Clarke to the basic combination of Ghandhi               
          and Sze.  It is apparent, however, from page 7 of the Answer,               
          that the Examiner has relied on Clarke for the limited                      
          teaching of disclosing the availability of 2 to 3 inch                      
          diameter (i.e. “at least 5cm”) wafers.  We find nothing,                    
          however, in the disclosure of Clarke which overcome the                     
          deficiencies of Ghandhi or Sze discussed supra.  Therefore,                 
          the Examiner’s obviousness rejection of dependent claim 15 is               
          not sustained.                                                              
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