Appeal No. 1998-2045
Application 08/402,374
region. The lowest leakage current shown in Morozumi’s Figure
10 is about 0.05x10 amperes corresponding to a channel-9
thickness of about 1250 D. Morozumi discloses that thin film
transistors having leakage currents of 100 picoamperes
(0.1x10 amperes) or less were possible [column 11, lines 46--9
48]. Thus, the examiner found that Morozumi suggested low
leakage liquid crystal devices in which the transistors had a
channel thickness of about 1250 D and a leakage current of
about 5x10 amperes. The examiner cites Asars as teaching a-11
low leakage liquid crystal device. Asars discloses that such
a device has a leakage resistance equal to or greater than 1010
ohms [column 5, lines 12-13]. Based on the teachings of
Morozumi and Asars, the examiner finds that the low leakage
liquid crystal device of Morozumi should have a leakage
resistance of 10 ohms or more as taught by Asars. The10
examiner notes that the low leakage liquid crystal devices of
Morozumi and Asars disclose nothing about the size of such
devices. The examiner notes that in making the low leakage
liquid crystal device of Morozumi and Asars, the artisan would
begin by considering liquid crystal cells which had a size
10
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