Appeal No. 1998-2934
Application No. 08/290,275
1. A resonant tunneling diode, comprising:
(a) an emitter made of a first material;
(b) a first tunneling barrier made of a second material and abutting
said emitter;
(c) a quantum well made of a third material and abutting said first
tunneling barrier;
(d) a second tunneling barrier made of said second material and
abutting said quantum well; and
(e) a collector made of a fourth material and abutting said second
tunneling barrier;
(f) wherein said first material, said second material, said third
material, and said fourth material are taken from the group of III-V
semiconductors which contain nitrogen and lattice match silicon.
The examiner relies on the following reference:
Brown et al. [Brown] 5,583,351 Dec. 10, 1996
(Filed Apr. 21, 1994)
The examiner also relies on appellant’s admitted prior art [APA] presented
in the background section of the specification.
Claims 1-4 stand rejected under 35 U.S.C. § 103 as unpatentable over APA in view
of Brown.
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