Appeal No. 1999-1666
Application No. 08/847,319
Appellant’s After Final Amendment (Paper No. 28) to claim
4 was entered by the examiner (Paper No. 30).
The invention pertains to the fabrication of
microelectronics devices and integrated circuits. More
specifically, the invention relates to a method of directly
doping a semiconductor wafer by exposing a surface of the
wafer to a non-ionized process medium in order to directly
dope at least a portion of the surface of the wafer. The non-
ionized process medium comprises a dopant gas having an
organic compound of a dopant species. The organic compound in
the dopant gas is a material selected from the group
consisting of (CH ) B, (C H ) B, (OCH ) B, (CH S) BCH ,33 2 53 33 3 2 3
(CH ) BN(CH ) (CH ) BOCH and CH SB(CH ) . The process includes3 2 32, 3 2 3 3 32
the step of heating the wafer, thermally activating the dopant
species and causing solid state diffusion of the dopant
species into the semiconductor wafer surface. At least
portions of the semiconductor wafer surface are doped with p-
type doping, where the dopant species is boron.
Claim 4 is illustrative of the claimed invention, and
reads as follows:
3
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