Appeal No. 1999-1666
Application No. 08/847,319
4. A direct doping method for semiconductor wafers,
comprising the steps of:
providing a semiconductor wafer having a surface;
exposing said surface of said wafer to a non-ionized
process medium in order to directly dope at least a portion of
said surface of said wafer, wherein said process medium
comprises a dopant gas, and wherein said dopant gas comprises
an organic compound of a dopant species; and
heating said wafer, thermally activating said dopant
species and causing solid state diffusion of said dopant
species into said semiconductor wafer surface, wherein said
doping is performed without the presence of plasma, wherein
said organic compound is a material selected from the group
consisting of (CH ) B, (C H ) B, (OCH ) B, (CH S) BCH ,3 3 2 53 33 3 2 3
(CH ) BN(CH ) , (CH ) BOCH , and CH SB(CH ) in order to dope at3 2 32 33332 3 32
least portions of said surface of said semiconductor wafer
with p type doping, wherein said dopant species is boron,
wherein said semiconductor wafer is heated to a temperature in
the range of 650 C and 1150 C.o o
The prior art relied upon by the examiner as evidence of
obviousness are:
Melas et al. 4,734,514 Mar. 29, 1988
(Melas)
Bohling et al. 4,904,616 Feb. 27, 1990
(Bohling)
Kiyota et al. 5,387,545 Feb. 7, 1995
(Kiyota) (filed Dec. 12,
1991) Zhang et al. 5,424,244 Jun.
13, 1995
(Zhang) (filed Nov. 4,
1992)
The appealed claims stand rejected under 35 U.S.C. § 103
as follows:
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