Appeal No. 1997-4027
Application No. 08/300,111
BACKGROUND
The invention is directed to a chemical vapor deposition chamber comprising
susceptor support for a substrate to be processed wherein the susceptor has an
extension between the support surface and the backside thereof to form a reactant gas
barrier preventing reaction gases from reaching the backside surface of said susceptor.
Claim 1 which is representative of the invention is reproduced below:
1. In a chemical vapor deposition chamber comprising in
combination
a susceptor support for a substrate to be processed,
a preheat ring surrounding said susceptor support,
a plurality of external heating lamps for heating the susceptor
support, the substrate thereon and the preheat ring,
a source of precursor gas that provides laminar flow of the gas
sequentially across the preheat ring and the substrate to an exhaust
port, wherein said susceptor has an extension between the support
surface and the backside thereof to form a reactant gas barrier
preventing reaction gases from reaching the backside surface of
said susceptor.
As evidence of obviousness, the Examiner relies on the following references:
Anderson et al. (Anderson) 5,269,847 Dec. 14, 1993
Narita JP2-246322 Oct. 2, 1990
(Printed Japanese Patent Application)
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