Appeal No. 1998-0039
Application No. 08/372,701
APPENDIX
29. A method of depositing a metal layer on the surface
of a semiconductor substrate having a periphery in a physical
vapor deposition chamber comprising
a) positioning a shield adjacent to the periphery of a
substrate,
b) depositing a metal from a target therefor onto said
substrate at a first relatively high pressure sufficient to
avoid arcing between said substrate and said shield,
c) reducing the chamber pressure to a second, lower
pressure so that good quality metal layers are deposited, and
d) continuing to deposit said metal layer at said second
pressure until a desired thickness is obtained.
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