Appeal No. 1998-0097
Application No. 08/513,036
the arsine gas in a range of from 8 x 10 Torr to 0.08 Torr-3
and a flow ratio of the arsine gas to the HC1 gas in a range
of from 0.25 to 2.5. This appealed subject matter is
adequately illustrated by independent claim 5 which reads as
follows:
5. A method for producing a semiconductor device
including dry etching an A1 Ga As (0 # x # 1) layer using a
x 1-x
HC1 gas, arsine gas, and hydrogen supplied at the same time
with a partial pressure of the arsine gas in a range of from 8
x 10 Torr to 0.08 Torr and a flow ratio of the arsine gas to-3
the HC1 gas in a range of from 0.25 to 2.5.
The references relied upon by the Examiner as
evidence of
obviousness are:
Heyen et al. (Heyen) "Vapor Phase Etching of GaAs in a
Chlorine System", Journal of Crystal Growth, Vol. 53, pp. 558-
162, (1981)
Van NT Blik et al. (Van NT Blik) "On the MOVPE Growth of Self-
Aligned Laser Structues", Journal of Crystal Growth Vol. 92,
pp. 165-170, (1988)
Menigaux et al. (Menigaux) 4,648,940 Mar. 10,
1987
All of the appealed claims stand rejected under the first
paragraph of 35 U.S.C. § 112 as being based upon an original
disclosure which fails to provide written description support
for the invention now claimed.
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