Appeal No. 1998-0970
Application 07/995,325
This is a decision on appeal under 35 U.S.C. § 134 from
the final rejection of claims 12-15, 20, 22, and 23.
We reverse.
BACKGROUND
The disclosed invention relates to a method of filling a
contact hole in a semiconductor device with an interposed
layer of impurity to achieve a reduction in contact resistance
with a subsequently deposited lead pattern layer.
Claim 12 is reproduced below.
12. A method of producing a semiconductor device,
comprising:
a) forming an impurity diffusion region having a
conductivity type in a surface of a semiconductor
substrate;
b) forming an insulating film on the surface of the
substrate so that the insulating film covers at least
part of the impurity diffusion region;
c) forming a photoresist film on the insulating
film;
d) patterning the photoresist film to provide the
photoresist film with an opening above the impurity
diffusion region;
e) etching the insulating film using the patterned
photoresist film as a mask to form a contact hole in the
insulating film at the location of the opening in order
to expose a part of the impurity diffusion region;
f) removing the patterned photoresist film;
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