Appeal No. 1998-0970
Application 07/995,325
Claims 12-15, 20, 22, and 23 stand rejected under
35 U.S.C. § 103(a) as being unpatentable over Tsunashima taken
in combination with Nickl, Allman, Gong, and Griswold.
We refer to the Final Rejection (Paper No. 22) and the
Examiner's Answer (Paper No. 32) (pages referred to as "EA__")
for a statement of the Examiner's position, and to the
corrected Appeal Brief (Paper No. 36) (pages referred to as
"Br__") for Appellants' arguments thereagainst.
OPINION
It is noted that Gong is apparently applied only to the
rejection of claims 13 and 15.
Tsunashima discloses a method of manufacturing a
semiconductor device. Figure 4 of Tsunashima discloses
forming an impurity diffusion region 113 (claim 12, step a)
and forming an insulating film 114 covering at least part of
the impurity diffusion region (claim 12, step b). Tsunashima
does not expressly disclose forming a photoresist film
(claim 12, step c), patterning the photoresist film (claim 12,
step d), etching the insulating film (claim 12, step e), and
then removing the pattern photoresist film (claim 12, step f).
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