Appeal No. 1998-2309 Page 8
Application No. 08/277,035
Swartz et al contradicts the hindsight theories and
speculations of the Examiner who has modified Swartz
et al. to produce perovskite BST by depositing a
liquid BST precursor directly on a metal electrode.
This contradiction exists because the passages in
the whole Swartz et al. reference, as shown in the
Appeal Brief, collectively suggest to those skilled
in the art that a seed layer is required to produce
perovskite structure in BST.
We find that Swartz is directed (col. 1, lines 11-15) "to
a sol-gel method for producing crystalline thin films of
perovskite compounds with better crystallinity and on a wider
variety of substrates by deposition of an intermediate
perovskite film (interlayer)." Utility is disclosed (col. 1,
lines 15-18) to include dielectric material and thin-film
capacitors. Swartz further discloses (col. 7, line 58 through
col. 8, line 4) that the invention is applicable to a "wider
variety of substrates" including substrates that are coated
with electrode materials, and a "wider variety of
ferroelectric thin-film materials" including (Ba,SR)TiO . The
3
process disclosed by Swartz (col. 3, lines 44-52) includes:
Providing a substrate; depositing a first layer of a
sol-gel perovskite precursor material wherein the
crystallization of this precursor material to the
perovskite phase is substantially insensitive to the
substrate; heat treatment of this first layer to
crystallize it into the perovskite structure:
depositing a second layer of a sol-gel perovskite
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: November 3, 2007