Appeal No. 1998-2483
Application No. 08/289,347
BACKGROUND
The appellant's invention relates to a method of manufacturing a semiconductor
device using high energy ion implantation and high heat to diffuse the implanted ions. An
understanding of the invention can be derived from a reading of exemplary claim 10, which
is reproduced below.
10. A method of manufacturing an interline CCD image sensor, the
method comprising the steps of:
providing a semiconductor substrate of a first conductivity type;
ion-implanting impurities directly into the semiconductor substrate
which is free of any layer at an energy of 0.7 to 16 MeV;
heat-treating the implanted impurities for a period in which a diffusion
time calculated in terms of 1100°C is less than 10 hours so as to form a well
of a second conductivity type in the semiconductor substrate; and
forming an image sensing section and a vertical transfer channel in a
surface of the well wherein the well is formed such that a peak of an impurity
concentration is located at a deep position from the substrate surface so that
a relatively lower impurity concentration region is formed on the surface
thereby to reduce residual image and blooming of the image sensor.
The prior art references of record relied upon by the examiner in rejecting the
appealed claims are:
Odanaka 5,160,996 Nov. 03, 1992
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