Appeal No. 1998-2919
Application No. 08/405,063
subject matter is adequately illustrated by independent claim
15 which reads as follows:
15. A method of forming an inhomogeneous doped film for
low temperature reflow, comprising the steps of:
forming a first BPSG layer having dopant concentration
around 4.4 wt. % boron and around 5.6 wt. % phosphorus;
forming a second abutting and overlying BPSG layer having
dopant concentration between around 1 - 4 wt. % phosphorus and
between around 7 - 8 wt.% boron; and
reflowing the first and second BPSG layers near 700°C.
The references relied upon by the examiner as evidence of
obviousness are:
Flatley et al. (Flatley) 4,349,584 Sep. 14, 1982
Lee et al. (Lee) '333 5,268,333 Dec. 7, 1993
Lee et al. (Lee) '101 5,166,101 Nov. 24, 1992
All of the appealed claims stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Lee '333 in combination with
Flatley and Lee '101.
We refer to the brief and to the answer for a thorough
exposition of the respective positions advocated by the
appellants and by the examiner concerning the above noted
rejection.
OPINION
2
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