Appeal No. 1999-0239
Application No. 08/520,003
an interlayer contact hole formed in said insulating
film;
a metal silicide layer provided at a bottom of said
interlayer contact hole;
a first conductive film, comprising at least one metal
film, provided on said insulating film and said interlayer
contact hole;
a second conductive film provided in said interlayer
contact hole;
a third conductive film provided on said first conductive
film and said second conductive film; and
a fourth conductive film provided on said third
conductive film.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Chen et al. (Chen) 5,371,410 Dec. 06,
1994
Saito 1 JP 62-241373 Oct. 22,
1987
Claims 1 through 4, 7, 8, and 11 through 14 stand
rejected under 35 U.S.C. § 102(b) as being anticipated by
Saito.
1Our understanding of this reference is based upon a
translation provided by the Translations Branch of The Patent
and Trademark Office, a copy of which is attached to this
decision.
2
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