Appeal No. 1999-0418 Page 2
Application No. 08/517,036
serves to modulate the gate channel conduction. The channel
conduction state can, for example, be used as an indicator of
a memory storage state.
Silicon substrates are the most commonly used types of
substrates for these applications. Unfortunately, the
ferroelectric polarization phenomenon is reduced or even
dissipated when the ferroelectric materials are deposited
directly on the silicon surface.
The appellants' MIS device includes a semiconducting
substrate, a silicon nitride buffer layer, a ferroelectric
metal oxide layer, and a noble metal top electrode. The use
of a layered superlattice material for the ferroelectric metal
oxide layer a polarization state to be retained for weeks
without continuous short-term refreshment.
Claim 1, which is representative for our purposes,
follows:
1. A ferroelectric device for use in
integrated circuits, comprising:
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