Appeal No. 1999-0418 Page 3
Application No. 08/517,036
a semi-conducting substrate;
a buffer layer formed atop said substrate;
a ferroelectric metal oxide layered superlattice
material formed atop said buffer layer; and
a top electrode,
there being no other electrode between said
semi-conducting substrate and said top electrode.
The references relied on in rejecting the claims follow:
Rohrer et al. (Rohrer) 4,707,987 Nov.
24, 1987
Yamazaki 5,021,839 June 4,
1991
Agostinelli et al. (Agostinelli)
5,241,191 Aug. 31,
1993
(filed Dec. 31, 1991)
Paz de Araujo et al. (Paz) 5,519,234 May 21,
1996
(filed Nov. 18, 1993)
Argos et al. (Argos), European Patent Application
0 540 993 A1, May 12, 1993
Arnett, Ferroelectric FET Device, IBM Technical
Disclosure Bulletin, Feb. 1973, at 2825
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