Appeal No. 1999-0848
Application No. 08/634,310
§ 112, second paragraph, rejection of claims 9-12 and 29-36.
Accordingly, only the final rejection of claims 2-6, 8, and 10-
12 is before us on appeal.
The claimed invention relates to a semiconductor device
having increased breakdown voltage in which a field oxide
surrounds a device region formed in a surface region of a
semiconductor body. The field oxide includes an etched recessed
portion of reduced thickness in which a conductive plate is
formed. The conductive plate is capacitively coupled to the
semiconductor body to enhance the breakdown voltage of a p-n
junction of a device formed within the device region.
Representative claim 8 is reproduced as follows:
8. A semiconductor device having increased breakdown voltage
comprising:
a semiconductor body having a surface region of one
conductive-type abutting a surface of said semiconductor body,
a device region formed in said surface region of opposite
conductive-type, said device region abutting said surface,
a field oxide on said surface and surrounding said device
region, said field oxide including a recessed portion of reduced
thickness in the range of about 0.6-1.4Fm adjacent to said
device region,
a device within said device region having a p-n junction
which terminates under said recessed portion of said field
oxide, and
2
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