Appeal No. 1999-1623
Application 08/474,239
Representative claims 25 is reproduced below:
25. A method of making a transistor comprising the steps of:
(a) providing a volume of semiconductor material doped with a dopant of a
predetermined conductivity type having a pair of opposed surfaces;
(b) then forming at least one region of electrically insulating material within said
volume, said at least one region of electrically insulating material including a part of said
semiconductor material, said at least one region of electrically insulating material being
spaced from said pair of opposed surfaces;
(c) then forming two spaced apart regions in said volume of semiconductor material
of conductivity type opposite to said predetermined conductivity type, at least one of said
spaced apart regions of opposite conductivity type extending from one of said opposed
surfaces to said at least one region of electrically insulating material to
provide one of an emitter or collector region between said one of said opposed surfaces
and said at least one region of electrically insulating material with the remainder of said
volume doped said predetermined conductivity type forming a base region.
The following references are relied on by the examiner:
Birrittella et al. (Birrittella) 4,631,570 Dec. 23, 1986
(filing date July 3, 1984)
Nakazato et al. (Nakazato) 4,769,687 Sep. 6, 1988
(effective filing date of Feb. 13, 1985)
1
Shoji [Kouji] (Japanese Kokai) 52-30175 Mar. 7, 1977
In what appears to be separately stated rejections the examiner has rejected claims
25, 26, 28-30, 32-34 and 41 under 35 U.S.C. §102(b) as being anticipated by Shoji
1The bottom of page 4 of the principal brief on appeal indicates that the translation
of record was supplied to appellant by the examiner during prosecution.
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