Appeal No. 1999-1792
Application No. 08/879,477
The invention is further illustrated by the following
claim.
1. A method of depositing a metal layer on a semiconductor
substrate comprising the steps of:
providing a silicon substrate having a first metal layer;
depositing an insulating layer over said metal layer;
forming via holes therein said insulating layer;
performing a sputter etch cleaning of said via holes;
depositing a barrier layer in said via holes;
depositing a film of second metal over said barrier layer,
wherein said second metal is aluminum copper alloy, wherein
second metal is deposited at a temperature between about 40°C
to 80°C, and wherein the thickness of said second metal is
between about 6,000 to 6,600 Å; and
depositing an anti-reflective coating onto said film of metal.
The Examiner relies on the following references:
Lee et al. (Lee) 5,266,521
Nov. 30, 1993
MacNaughton et al. (MacNaughton) 5,374,592
Dec. 20, 1994
Mueller et al. (Mueller) 5,427,666
June 27, 1995
Admitted Prior Art (APA)
Claims 1-8, 12 and 13 stand rejected over APA in view of
Mueller and MacNaughton, while claims 1-8, 12, 13, 14-21, 24,
and 27-29 stand rejected over Lee in view of APA and
2
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