Appeal No. 1999-2611
Application No. 08/808,537
The claimed invention relates to an electrode
material applied to a III-V group semiconductor compound
doped with p-type impurities. The electrode material
comprises an alloy of Au and at least one metal selected
from the group consisting of Mg and Zn. Appellants
assert at pages 2 and 3 of the specification that this
particular electrode material exhibits low contact
resistance against a III-V group compound semiconductor,
and can advantageously be employed as a light emitting
device driven at low voltage and having a high luminance.
Claim 1 is illustrative of the invention and reads
as follows:
1. An electrode material applied to a III-V
group compound semiconductor expressed as a general
formula of In GA Al N, where x+y+z=1, 0<x<1, 0<y<1,
x ( z
and 0<z<1, said compound semiconductor being doped
with p-type impurities, said electrode material
comprising an alloy of Au and at least one metal
selected from the group consisting of Mg and Zn,
wherein Mg is present in a concentration range of
from 0.1 to 2.5% by weight based on the electrode
material and Zn is present in a concentration range
of from 1 to 30% by weight based
on the electrode material.
The Examiner’s Answer cites the following
references:
Tonai 5,047,832 Sep. 10,
1991
2
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