Appeal No. 2000-0131
Application No. 08/800,972
61 USPQ2d 1430, 1433-34 (Fed. Cir. 2002). Our review of Fuller
reveals no mention of parasitic current gain levels, let alone any
structural arrangement that would reduce parasitic current gain to
the specific level set forth in appealed claim 20.
Similarly, with respect to independent claim 24, which sets
forth a specific threshold turn on voltage for the body bias
transistors of “less than 640 mv”, we find no evidence that would
support the Examiner’s assertion of obviousness. We do initially
note, as discussed previously, that Appellants have not provided
any persuasive evidence that would convince us that the Examiner
has erred in concluding that the body bias transistors in Fuller,
in order to perform their function, would necessarily turn on
before the turn on of the intrinsic diodes of the MOSFET switch.
We find, however, no evidence provided by the Examiner that would
support the assertion that “ ... a standard diode is notoriously
well known to have a 640 mv diode drop” (Answer, page 8) and,
accordingly, we find the Examiner’s conclusion that Fuller’s body
bias transistor turn on voltage would necessarily be less than 640
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