Appeal No. 2000-0170
Application No. 08/811,124
patterning of the metallization lines, and to resist electro-
migration and creep failure between the plug or contact and the
metallization line.
The following claims is illustrative of the invention:
41. A contact plug and metallization line structure
comprising:
a semiconductor substrate having a contact surface
thereon;
an insulation layer having a contact hole
therethrough extending to the contact surface on the
semiconductor substrate;
a plug substantially composed of a first metal and
situated in said contact hole, said plug being
electrically insulated by said insulation layer;
a metallization line substantially composed of a
second metal, wherein said plug and said metallization
line are electrically connected and have a
substantially continuous composition gradient of a
selected alloying element between said first metal and
said second metal.
The examiner relies upon the following references:
Yoda et al. (Yoda) 5,254,872 Oct. 19, 1993
Lee et al. (Lee) 5,355,020 Oct. 11, 1994
Honeycutt et al. (Honeycutt) 5,644,166 Jul. 01, 1997
(filed Jul. 17, 1995)
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